THz Spectroscopy of the Anisotropic Refractive Index of β-Ga 2 O 3

Verdad C. Agulto,Kazuhiro Toya,Thanh Nhat Khoa Phan,Valynn Katrine Mag-usara,Jiajun Li,Melvin John F. Empizo,Toshiyuki Iwamoto,Ken Goto,Hironaru Murakami,Yoshinao Kumagai,Nobuhiko Sarukura,Masashi Yoshimura,Makoto Nakajima

international conference on infrared, millimeter, and terahertz waves（2021）

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摘要

We investigated the monoclinic β-Ga 2 O 3 ultrawide-bandgap semiconductor using transmission terahertz time-domain spectroscopy (THz-TDS). To characterize the anisotropic properties, the complex refractive index of a semi-insulating bulk and of an n-type Si-doped homoepitaxial film were obtained along the [100] and [010] directions. The material response can be well-described by the Drude-Lorentz model, from which the static permittivity and the electrical properties were determined in good agreement with electrical contact measurements.

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关键词

wide-bandgap semiconductor,transmission terahertz time-domain spectroscopy,n-type Si-doped homoepitaxial film,Drude-Lorentz model,anisotropic refractive index,monoclinic crystal structure,permittivity,electrical contact measurements,carrier concentration,carrier mobility,Ga2O3:Si

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