Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation

Deep Trench Isolation (DTI) integrated in BCD Technology can induce crystal defectivity. Architectural and process solutions are not enough to completely eradicate the problem in the devices where the DTI reaches the bulk silicon of the epitaxial wafers. The paper highlights the role of BMD depletion around the bottom of DTI for reducing the dislocations. By acting on the content of interstitial oxygen (OI), it is possible to modulate the BMDs generation, for a fixed process flow. Actually, as the OI decreases, the oxygen denuding is promoted. Finally, it is shown that also the B doping of the bulk silicon affects on the crystal defects morphology. Therefore, the substrate specification of OI and resistivity affect the crystal defectivity induced by the DTIs with the BMDs.