Low-Threshold Coherent Emission at 1.5 mu m from Fully Er3+ Doped Monolithic 1D Dielectric Microcavity Fabricated Using Radio Frequency Sputtering

Low threshold coherent emission at 1.5 mu m is achieved using Er3+-doped dielectric 1D microcavities fabricated with a Radio Frequency-sputtering technique. The microcavities are composed of a half-wavelength Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of ten, five, and seven pairs of SiO2/TiO2 layers, also doped with Er3+ ions. The morphology of the structure is inspected using scanning electron microscopy. Transmission measurements show the third and first order cavity resonance at 530 nm and 1.5 mu m, respectively. The photoluminescence measurements are obtained using the optical excitation at the third order cavity resonance using a 514.5 nm Ar+ laser or Xe excitation lamp at 514.5 nm, with an excitation angle of 30 & DEG;. The full width at half maximum of the emission peak at 1535 nm decreased with the pump power until the spectral resolution of the detection system was 2.7 nm. Moreover, the emission intensity presents a non-linear behavior with the pump power and a threshold at about 4 mu W.