Ellipticity dependent excitation and high harmonic generation from intense mid-IR laser pulses in ZnO

european quantum electronics conference(2021)

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摘要
In this contribution we experimental examine the ellipticity dependence of strong off resonance absorption and high harmonic generation (HHG) in the wide band gap semiconductor ZnO upon irradiation with intense mid-IR laser pulses. HHG in semiconductors originates from nonlinear intraband currents and interband transitions of the electrons driven by the strong mid-IR fields [Ghimire]. Here, we show that the intra- and interband contribution to HHG in a ZnO thin film are affected differently by the driving laser ellipticity.
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ellipticity dependent excitation,high harmonic generation,mid-IR laser pulses,ellipticity dependence,resonance absorption,HHG,wide band gap semiconductor,semiconductors originates,nonlinear intraband currents,mid-IR fields [Ghimire],interband contribution,driving laser ellipticity,zinc oxide thin film,ZnO
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