采用Ga(In,As)P异变缓冲层的GaP/Si衬底上InAs量子阱

InAs/In0. 83Al0. 17As quantum wells have been demonstrated on In0. 83Al0. 17As metamorphic layers on GaP/Si substrates. The effects of GaxIn1-xP and GaAsyP1-y graded buffer layers on the sample performances are investi?gated. The sample with GaxIn1-xP metamorphic buffer layer has narrower width in X-ray diffraction reciprocal space maps,indicating less misfit dislocations in the sample. Mid-infrared photoluminescence signals have been observed for both samples at room temperature,while the sample with GaxIn1-xP metamorphic buffer shows stron?ger photoluminescence intensity at all temperatures. The results indicate the metamorphic buffers with mixed cat?ions show superior effects for the mid-infrared InAs quantum wells on GaP/Si composite substrates.