Monolithic InGaAs/InP MQW Nanolasers on SOI Substrate
International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) (2019), paper JTh4E.6(2019)
摘要
We report the optical pumped InGaAs/InP MQW nanolasers directly grown on the SOI substrate after etching away part top Si on both sides of the nanowires to reduce the optical leakage loss.
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