The effect of low temperature annealing on the UV, ns laser damage performance of hafnia single layers

We compare the 355 nm, 45o AOI p-pol 8 n-s laser damage performance of standing-wave hafnia single layers fabricated under the same conditions and annealed under different temperatures. An intriguing trend is observed in the laser damage performance with respect to annealing temperature, with a notable performance increase observed in the sample annealed at 250o C. Chemical compositional analysis via Rutherford Backscatter spectroscopy (RBS) indicates that annealing induces sub-stoichiometric hafnia films for high temperature annealing.