A Novel High Voltage SOI LIGBT with Split Gate and Carrier Stored Layer

A novel high voltage silicon-on-insulator (SOI) based lateral insulated gate bipolar transistor (LIGBT) with a split gate (SG) and an N-type carrier stored (N-CS) layer (SOI SGCS-LIGBT) is proposed. The shielding effect provided by the trench SG structure reduces the Miller capacitance (C GC ) of the device. Meanwhile, the trench structure as well as the N-CS layer both work as a hole barrier to enhance the conduction modulation in the emitter side of the N- drift region. Numerical analysis results show that the Q G for the VGE increases from 0V to 10V and the C GC at the V CE =25V are deceased from 0.27μC/cm2 and 0.54nF/cm2 of the conventional enhanced trench gate LIGBT (ET-LIGBT) to 0.11μC/cm2 and 0.08nF/cm2 of the proposed structure, respectively. Meanwhile, compared with the ET-LIGBT, the turn-off loss (EOFF) of the proposed SGCS-LIGBT is reduced by 44.4% at the same on-state voltage drop (VCEON) of 2.0V.