Sub-Nanojoule Electro-Optic Switching Using Ge2Sb2Te5Integrated on Silicon Waveguide

Jagriti Ahuja,Shubham Singh,Nadir Ali,Rajesh Kumar

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) (2019), paper JW4A.76（2019）

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摘要

We report electro-thermal investigation of 1×1 non-volatile switch operating at 1.55 µm, using reversible phase change in Ge2Sb2Te5. The switch provides 26.43 dB extinction ratio and 1.62 dB insertion loss with sub-nano joule switching energy.

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