Gate Diode Current Sensing for Device Temperature Estimation in GaN RF Power Amplifiers

This work presents a gate current sensing technique for RF power amplifiers suitable for estimating effects of self-heating in GaN HEMTs. For this, the gate-source Schottky diode is used as a temperature sensor which is modelled using a conventional exponential Schottky diode equation. The expressed model includes the temperature-dependent built-in voltage which is found to scale linearly with a c...