12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure

Tongtong Yang,Xianbing Li,Yan Wang,Peng Yao,Ruifeng Yue

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, an ultrahigh voltage silicon carbide (SiC) gate turn off (GTO) Thyristor with a novel trench-modulated two-zone junction termination extension (TM-TZ-JTE) is investigated through TCAD simulations and experimental fabrications. Bevel trench rings are included in each JTE to achieve a smooth decrease of the effective JTE dose from the inner side to outer side of the termination, whi...

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关键词

Silicon carbide,Etching,Logic gates,Thyristors,Doping,Structural rings,Modulation

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