Simulation Study of Lateral Schottky Barrier IMPATT Diode Based on AlGaN/GaN 2-DEG for Terahertz Applications

Xiao-Yu Zhang,Lin-An Yang, Xiao-Lin Hu,Wen-Lu Yang,Yu-Chen Liu,Yang Li,Xiao-Hua Ma,Yue Hao

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, a novel lateral Schottky barrier high-low impact-ionization-avalanche-transit-time (IMPATT) diode, i.e., the high-electron mobility transistor (HEMT)-like IMPATT (HIMPATT) diode, is proposed based on the AlGaN/GaN 2-D electron gas (2-DEG). Numerical simulation demonstrated that the HIMPATT diode shows better characteristics than the conventional vertical IMPATT diode because of a ...

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关键词

Schottky diodes,Wide band gap semiconductors,Aluminum gallium nitride,Radio frequency,Schottky barriers,Semiconductor process modeling,HEMTs

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