Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors

Jakob Pruefer,Jakob Leise,James W. Borchert,Hagen Klauk,Ghader Darbandy,Aristeidis Nikolaou,Benjamín Iñíguez,Thomas Gneiting,Alexander Kloes

IEEE Transactions on Electron Devices（2022）

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摘要

We have developed models for three different short-channel effects [subthreshold-swing degradation, threshold-voltage roll-off, and drain-induced barrier lowering (DIBL)] in coplanar organic thin-film transistors (TFTs) and verified them against the measured current–voltage characteristics of TFTs having channel lengths as small as $0.5 \mu \text{m}$ 更多

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关键词

Thin film transistors,Geometry,Electric potential,Logic gates,Electrodes,Mathematical models,Integrated circuit modeling

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