Depletion-Mode β -Ga 2 O 3 MOSFETs Grown by Nonvacuum, Cost-Effective Mist-CVD Method on Fe-Doped GaN Substrates

Yu Xu,Chunfu Zhang,Pengru Yan,Zhe Li,Zhaoqing Feng,Yachao Zhang,Dazheng Chen,Weidong Zhu,Qian Feng,Shengrui Xu,Jincheng Zhang,Yue Hao

IEEE Transactions on Electron Devices（2022）

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摘要

In this work, $\beta $ -Ga2O3 MOSFETs grown by nonvacuum, cost-effective mist chemical vapor deposition (mist-CVD) method on Fe-doped GaN substrates were demonstrated for the first time. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements identify the pure 更多

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关键词

MOSFET,Gallium nitride,Substrates,Logic gates,Surface morphology,Lattices,Gallium

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