Effects of Temperature on the Performance of Pentcene/SnNc/C60 Planar Heterojunction Based Organic Phototransistors

A bottom-gate top-contact OPT based on Pentance/SnNc/C60 planar heterojuction was fabricated. The device was characterized at different ambient temperature (Ta) (−40 ~ 110 °C). The dependence of drain current, threshold voltage and field-effect mobi0.lity both in the dark and under illumination on the ambient temperature were revealed. As rising Ta, the drain current increase, and the value of the field-effect mobility (μ) increase first, and then tend to saturate. We suggest that the performance dependence on ambient temperature can be attributed to thermally activated small polaron hopping which facilitate the carrier transport in the enlarged film grains.