Advanced Infrared Photodetectors at SCD

P. C. Klipstein, Y. Benny, Y. Cohen, R. Dobromislin, S. Elkind, R. Fraenkel, S. Gliksman, A. Glozman, I. Hirsh, O. Klin,L. Langof, I. Lukomsky, I. Marderfeld,B. Milgrom,N. Yaron, M. Nitzani, N. Snapi, I. Strichman, E. Weiss

Springer Proceedings in PhysicsICOL-2019（2021）

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摘要

SCD has developed advanced technologies for small pitch, large format and high operating temperature detector arrays, based on III–V materials and novel barrier architectures. These detectors operate with background limited performance in the Long-, Mid- and Short-wave infrared, with high uniformity and good stability. In all cases the pixel operability is above 99.5%.

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关键词

III–V semiconductor, Heterostructure, XBn, XBp, Barrier detector, Type II superlattice, InAsSb, Focal plane array, LWIR, MWIR, SWIR

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