Correlation Between the Growth Process and Film Properties of RF-PECVD Grown Nanocrystalline Graphite/Graphene

This study aims to better correlate the properties of nanocrystalline graphite/graphene thin films with the individual deposition parameters, such as RF power, substrate temperature, chamber pressure and other influential factors. The carbonic films were grown using methane as gas precursor by capacitively coupled radiofrequency plasma enhanced chemical vapor deposition. The morphology, structure and electrical properties of the thin films deposited on both Si and SiO2 substrates at different process parameters were investigated through scanning electron microscopy, Raman spectroscopy, atomic force microscopy and four-point probing.