Study of Parameters Influencing on the Performance of SiNW ISFET Sensor

In recent years, Silicon nanowires (SiNW)-based ISFET devices have been selected as promising better sensors because of their advantages such as real-time detection and the good sensitivity caused by high surface-to-volume ratio. In this work, a mathematical model is evaluated to study the performance of the SiNW ISFET sensor. Furthermore, the effects of the parameters such as the NW width (Wtop) and the gate insulator capacity COX on the performance of the SiNW ISFET sensor are investigated. The planar-ISFET structure and Si-nw-ISFET technology are also examined in our simulation and compared. Finally, the mathematical model of SiNW ISFET is verified with the experimental measurements and with other models indicated in the literature, gives a good accuracy at different pH values.