Field‐Induced Ferroelectric Hf 1‐ x Zr x O 2 Thin Films for High‐ k Dynamic Random Access MemorySeung Dam Hyun,Hyeon Woo Park,Min Hyuk Park,Young Hwan Lee,Yong Bin Lee,Beom Yong Kim,Ho Hyun Kim,Baek Su Kim,Cheol Seong HwangAdvanced Electronic Materials(2020)引用 18|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要