Epitaxial GaN using Ga(NMe₂)₃ and NH₃ plasma by atomic layer deposition

Journal of Materials Chemistry C（2020）

引用 7|浏览1

暂无评分

摘要

GaN is grown epitaxially on 4H-SiC without buffer layer using ALD with Ga(NMe2)3 and NH3 plasma.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要

Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition