(Invited) Design and Modeling of Sigesn Lasers: From Modeling Experiments to Future Device Concepts

We will present modeling of experimentally demonstrated SiGeSn multi-quantum well lasers. In particular, the impact of radiative recombination lifetime reduction in multi-quantum wells as well as temperature dependent L-valley electron concentrations will be shown to yield adequate modeling of these devices. Models will be further extrapolated to yield performance requirements for electrically pumped and room temperature lasing operation.