Monolayer Bi₂Se_3−xTe_x: novel two-dimensional semiconductors with excellent stability and high electron mobility

Yifan Liu,Yuanfeng Xu,Yanju Ji,Hao Zhang

Physical Chemistry Chemical Physics（2020）

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摘要

The bandgaps for monolayers Bi2Se3, Bi2Se2Te and Bi2SeTe2 decrease under moderate strains ranging from −4% to 10%, and the predicted electron mobilities are high, reaching 2708 cm2 V−1 s−1 for Bi2SeTe2.

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Monolayer Bi2Se3−xTex: novel two-dimensional semiconductors with excellent stability and high electron mobility

Monolayer Bi₂Se_3−xTe_x: novel two-dimensional semiconductors with excellent stability and high electron mobility