Low-temperature IGZO technology on transparent plastic foil by atmospheric spatial atomic layer deposition

Corné Frijters,Roy Verbeek,Gerard de Haas,Tung Huei Ke,Erwin Vandenplas,Marc Ameys,Jan-Laurens J. P. van der Steen,Gerwin Gelinck,Eric Meulenkamp,Paul Poodt,Auke Jisk Kronemeijer,Ilias Katsouras

Proceedings of the International Display Workshops（2019）

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摘要

We use sALD to deposit IGZO and Al2O3 layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (d200oC). We attain mobility of 8 cm2/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.

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