Analytical Modeling of Surface Potential for Double-Gate MOSFET

In this paper, an analytical surface potential of a double-gate MOSFET is modeled using the two-dimensional Poisson equation, and the impact of gate voltage (VGS) and drain voltage (VDS) on the surface potential is studied. The physical dimensions of the bulk MOSFETs have been aggressively scaled down to its limit and are not showing any improvement in device performance on further scaling. So in order to enhance the performance of the device, we need a new architecture. This new architecture is called double-gate MOSFET or DG MOSFET and it is a promising candidate for 40 nm technology nodes. DG MOSFET provides better control of the channel inversion by applying two gates across the channel.