The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressureT Wojtowicz,P Ruterana,M E Twigg,R L Henry,D D Koleske,A E WickendenMicroscopy of Semiconducting Materials 2003(2018)引用 0|浏览7暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要