A Gain-Boosted 52–142 GHz Band-Pass Distributed Amplifier in O.13μm SiGe Process with f<inf>max</inf> of 210GHzHooman Rashtian,Omeed Momeni2018 13th European Microwave Integrated Circuits Conference (EuMIC)（2018）引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
