Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design

Kyle M. Bothe,Satyaki Ganguly, Jia Guo,Yueying Liu, Alex Niyonzima, Olof Tornblad,Jeremy Fisher, Don A. Gajewski,Scott T. Sheppard,Basim Noori

IEEE Electron Device Letters（2022）

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摘要

The world class performance and reliability of a high-power density AlGaN/GaN high electron mobility transistor (HEMT) with an innovative sunken source connected field plate (SCFP) is reported. The optimized HEMT structure implements a novel sunken SCFP design that has significant advantages over the conventional field plated GaN HEMT. The new design reduced parasitic capacitances (Cgs ...

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关键词

HEMTs,Reliability,Radio frequency,Performance evaluation,Reliability engineering,Logic gates,Standards

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