Monolithic 3D Integration With Photosensor and CMOS Circuits Using Ion-Cut Layer Transfer

IEEE Electron Device Letters(2022)

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摘要
A thin Si layer transfer process for monolithic 3D (M3D) integration is proposed using hydrogen ion (H+) implantation. The upper Si layer was transferred to CMOS circuits fabricated on the lower substrate by H+ implantation, oxide-to-oxide bonding, and a cleavage process at low temperature (< 500 °C). The M3D system comprising the photosensor connected to the CMOS device w...
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关键词
Silicon,Performance evaluation,Metals,Substrates,Frequency modulation,Ring oscillators,Integrated circuit interconnections
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