P-22: Fabrication of Oxide-Based Phototransistors for Visible Light Detection via Nanowire Interfaces

This work shows an oxide‐based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO 2 ) and titanium dioxide (TiO 2 ) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal‐to‐noise ratio of 10 5 .