A 23.6Mb/mm2 SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applicationsZheng Guo,Daeyeon Kim,Satyanand Nalam,Jami Wiedemer, Xiaofei Wang,Eric Karl2018 IEEE International Solid - State Circuits Conference - (ISSCC)（2018）引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
