Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysisB. G. Vasallo,T. González,V. Talbo,Y. Lechaux,N. Wichmann,S. Bollaert,J. MateosJournal of Applied Physics(2018)引用 1|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要