SiC and GaN Power Semiconductor Devices

Wide bandgap semiconductors such as SiC and GaN have drawn a lot of attention in power applications due to their superior material properties such as high critical electric field resulting in a minimum of 10 times higher breakdown voltage or a 100 times smaller on-resistance than Si. Additionally, SiC has a thermal conductivity which is approximately three times higher than that of Si. These unique properties of SiC and GaN materials have made them promising candidates for future high-power, high-frequency semiconductor devices.