High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With <italic>In-Situ</italic> O3 TreatmentTakashi Ando,Pouya Hashemi,John Bruley,John Rozen,Yohei Ogawa,Siyuranga Koswatta,Kevin K. Chan, Eduard A. Cartier,Renee Mo,Vijay NarayananIEEE Electron Device Letters(2017)引用 0|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要