Surface Leakage Currents in SiN and Al 2 O 3 Passivated AlGaN/GaN High Electron Mobility TransistorsLong Bai,Wei Yan,Zhao-Feng Li,Xiang Yang,Bo-Wen Zhang,Li-Xin Tian,Feng Zhang,Grzegorz Cywinski,Krzesimir Szkudlarek,Czesław Skierbiszewski,Wojciech Knap,Fu-Hua YangChinese Physics Letters(2016)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要