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16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method

Takanori Matsuzaki,Tatsuya Onuki, Shuhei Nagatsuka,Hiroki Inoue,Takahiko Ishizu,Yoshinori Ieda,Naoto Yamade,Hidekazu Miyairi, Masayuki Sakakura,Tomoaki Atsumi,Yutaka Shionoiri,Kiyoshi Kato,Takashi Okuda,Yoshitaka Yamamoto,Masahiro Fujita,Jun Koyama,Shunpei Yamazaki

2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers（2015）

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