Si₂Sb₂Te₅phase change material studied by an atomic force microscope nano-tip

The Si2Sb2Te5 phase change material has been studied by applying a nano-tip (30 nm in diameter) on an atomic force microscopy system. Memory switching from a high resistance state to a low resistance state has been achieved, with a resistance change of about 1000 times. In a typical I–V curve, the current increases significantly after the voltage exceeds ~4.3 V. The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements. The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.