InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design

Marina Deng,Chhandak Mukherjee,Nil Davy,Virginie Nodjiadjim,Muriel Riet,Colin Mismer,Jérémie Renaudier,Magali De Matos,Cristell Maneux

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2021）

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摘要

We report on-wafer characterization results up to 500 GHz on a 0.4×5 μm2 InP/InGaAs DHBT. The measurements were performed using an on-wafer Thru-Reflect-Line (TRL) calibration kit especially developed in this technology. The resulting measurements allowed to validate both the RF performance of the 0.4-μm InP/InGaAs DHBT fabricated by III-V Lab, featuring 390/600 GHz ${f_{T}f_{{\max...

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关键词

Semiconductor device modeling,Radio frequency,Semiconductor device measurement,DH-HEMTs,Frequency measurement,Circuit synthesis,Heterojunction bipolar transistors

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