Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance

Sébastien Fregonese,Chhandak Mukherjee,Holger Rücker,Pascal Chevalier,Gerhard Fischer,Didier Céli,Marina Deng,Marine Couret,François Marc,Cristell Maneux,Thomas Zimmer

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2021）

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摘要

This paper examines the performance of SiGe HBTs under DC and AC pulsed operating conditions beyond the breakdown voltage. Two state-of-the-art technologies are investigated. The limitations when biasing the transistor at or beyond peak fT are thermal only, thus penalizing deep trench architectures. Furthermore, the reliability implications are explored and their impact on device degrad...

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关键词

Degradation,Semiconductor device modeling,Performance evaluation,Circuit optimization,Power amplifiers,Heterojunction bipolar transistors,Integrated circuit modeling

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