Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs

Jerome T. Mlack,Nick Edwards,Brian Novak,Annaliese Drechsler,Jordan Merkel,Timothy Vasen, Daniel J. Hannan,Paul Brabant,Ishan Wathuthanthri,Justin Parke, Sam Wanis,Robert S. Howell,Ken A. Nagamatsu

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2021）

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摘要

This paper reports improvements in the Superlattice Castellated Field Effect Transistor (SLCFET) 10-channel device process to enable fabrication of ultra-wideband DC-110GHz Single Pole Double and Triple Throw (SPDT/SP3T) MMICs. The 10-channel SLCFET device offers higher performance, but is more difficult to fabricate. Through planarization of the device contact pads, the fabrication of the gate el...

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关键词

Fabrication,Planarization,Field effect transistors,Superlattices,Insertion loss,Switches,Wide band gap semiconductors

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