Charge Trapping in GaN Power Transistors: Challenges and Perspectives

Over the past decade, gallium nitride has emerged as an excellent semiconductor for the fabrication of power devices, to be used in energy conversion systems and switching-mode power converters. GaN and its alloys have a high breakdown field, a high saturation velocity and a wide energy gap, thus being suitable for high temperature and high voltage operation. The use of large-size silicon substrat...