Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications

Ajay Raman,Vibhor Jain, Elanchezhian Veeramani, Beng Woon Lim,Uppili S. Raghunathan,Yves Ngu,Alvin Joseph

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2021）

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摘要

For the first time, we present a comprehensive study of the dependence of the RF breakdown voltage of a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) on the DC breakdown metrics, device size, geometry, bias conditions and temperature. We explore the RF breakdown voltage of a SiGe HBT based on the 4th generation GLOBALFOUNDRIES 350nm PA technology and show that the col...

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关键词

Radio frequency,Performance evaluation,Temperature dependence,Limiting,Electric breakdown,Power amplifiers,BiCMOS integrated circuits

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