Total Ionizing Dose Effects ofn-FinFET Transistor in iN14 Technology
2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)（2021）
摘要
This work presents the TID evaluation of iN14 technology developed by IMEC under gamma irradiations. The impacts of TID on electrical characteristics and on the transistor-to-transistor variability are presented for nFinFET for several gate lengths.
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关键词
Total Ionizing Dose Effects,FinFET,electrical characteristics
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