Controlling Threshold Voltage of CMOS SOI Nanowire FETs With Sub-1 nm Dipole Layers Formed by Atomic Layer Deposition

Dongqi Zheng,Wonil Chung,Zhizhong Chen,Mengwei Si,Calista Wilk,Peide D. Ye

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, bidirectional control of threshold voltage ( ${V}_{T}$ ) is realized in both n- and p-silicon-on-insulator (SOI) nanowire FETs (NWFETs) by using sub-1 nm atomic-layer-deposited (ALD) dipole layers (Y2O3 and Al2O3) for the first time. A 0.7 nm Y2O3更多

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关键词

Hafnium oxide,High-k dielectric materials,Logic gates,Threshold voltage,Silicon,Dielectrics,MOS capacitors

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