Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

Shengli Zhang,Hengze Qu,Jiang Cao,Yangyang Wang,Shengyuan A. Yang,Wenhan Zhou,Haibo Zeng

IEEE Transactions on Electron Devices（2022）

引用 15|浏览8

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摘要

Conventional silicon-based transistor downscaling is approaching its physical limits, and thus additional novel solutions are urgently desired to address this issue. Herein, we show that 2-D antimonene with heavy effective mass and high density of state (DOS) via strain engineering presents reliable transistor performance with the channel length ( ${L}_{\...

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关键词

MOSFET,Effective mass,Tensile strain,Doping,Dispersion,Tunneling,Phonons

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