Development and Analysis of 6500V SiC Power MOSFET

Tian Lixin,Yang Fei,Niu Xiping,An Yunlai,Zhang Wenting,Liu Rui,Du Zechen,Wu Junmin

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)（2021）

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摘要

We have successfully developed 6500V SiC MOSFET on 6-inch wafer with the on-resistance of 160mΩ and specific on-resistance of 55mΩ.cm2. In this paper, simulation, fabrication and electrical characteristic are reported. At the same time, some body diode characteristics are revealed. Experiments and simulations show that when Vgs=0V the p-well surface doping concentration affects the body...

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