A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT
2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)(2021)
摘要
In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of GaN-based Micro-LED and its driver HEMT. This structure is a promising candidate for the optoelectronic switch in high-speed visible light communications owing to its elimination of ...
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关键词
novel monolithically integrated structure,driver hemt,gan-based,micro-led
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