Performance Analysis of Novel Heterojunction ESDG-TFET for Analogue/RF Applications
2021 7th International Conference on Signal Processing and Communication (ICSC)（2021）
摘要
In this article performance analysis of Heterojunction Extended Source Double Gate Tunnel Field Effect Transistor (ESDG-TFET) has been done, which is based on the concept of bandgap engineering for RF/analogue applications. The study has been conducted on interfacing of III-V group material along with IV group material, to enhance ION (ON-state current) of the proposed device. It has be...
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关键词
Radio frequency,Performance evaluation,TFETs,Photonic band gap,Voltage,Heterojunctions,Tunneling
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