Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI

Guillaume Tochou,Andreia Cathelin,Antoine Frappé,Andreas Kaiser,Jan Rabaey

IEEE Transactions on Circuits and Systems II: Express Briefs（2022）

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摘要

The Switched-Capacitor Power Amplifier (SCPA) has become a key enabler for modern wireless communication because of its high efficiency, high linearity, and high integrability. This brief discusses the impact of the extended Forward Body-Biasing (FBB) feature in 28 nm FD-SOI technology on Ultra-Low Voltage (ULV) SCPA. A new model of the Drain Efficiency (DE) and System Efficiency (SE) including bo...

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关键词

MOSFET,Analytical models,Transistors,Switches,Inverters,Integrated circuit modeling,Threshold voltage

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