15kV Press Pack SiC IGBT

Yujie Du,Xinling Tang,Liang Wang,Zhibin Zhao,Xiaolei Yang,Fei Yang,Junmin Wu

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)（2021）

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摘要

Press pack is easier to use in series and has a short circuit failure mode, which makes it especially suitable for the application requirements of high voltage and high power devices in the power system. The SiC IGBT device itself has the characteristics of high voltage, high temperature and high power density. The application of press pack SiC IGBT devices will greatly promote the technological i...

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关键词

Insulated gate bipolar transistors,Presses,Technological innovation,Temperature,Silicon carbide,Asia,Switches

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