The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

Ruijun Zhang,Rongdun Hong,Jiafa Cai,Xiaping Chen,Dingqu Lin,Mingkun Zhang,Shaoxiong Wu,Yuning Zhang,Jingrui Han,Zhengyun Wu,Feng Zhang

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)（2021）

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摘要

In this study, 4H-SiC with different thickness and doping types were annealed in hydrogen at low pressure, the minority carrier lifetimes of which were investigated by microwave photoconductive decay ($\mu$-PCD). It can be observed that the minority carrier lifetime of 4H-SiC will increase and decrease repeatedly after each hydrogen annealing. The phenomenon is due to the surface states...

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关键词

Annealing,Silicon carbide,Hydrogen,Doping,Surface roughness,Etching,Rough surfaces

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